SH8M41TB1

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

3.4A, 2.6A

Drain to Source Voltage (Vdss) :

80V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

9.2nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Power - Max :

2W

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

130mOhm @ 3.4A, 10V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2.5V @ 1mA