SH8K10SGZETB

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

7A (Ta), 8.5A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

16.8nC @ 5V, 17.8nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 10V, 830pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Power - Max :

1.4W (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2.5V @ 1mA