QS8M11TCR

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

3.5A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

-

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

8-SMD, Flat Lead

Power - Max :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

-

Supplier Device Package :

TSMT8

Vgs(th) (Max) @ Id :

-