HS8K11TB

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

7A, 11A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

11.1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-UDFN Exposed Pad

Power - Max :

2W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

17.9mOhm @ 7A, 10V

Supplier Device Package :

HSML3030L10

Vgs(th) (Max) @ Id :

2.5V @ 1mA