SSM6L820R,LXHF

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

4A (Ta)

Drain to Source Voltage (Vdss) :

30V, 20V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 4.5V, 6.7nC @4.5V

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 15V, 480pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

6-SMD, Flat Leads

Power - Max :

1.4W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V

Supplier Device Package :

6-TSOP-F

Vgs(th) (Max) @ Id :

1V @ 1mA, 1.2V @ 1mA