TT8M1TR

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

2.5A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate, 1.5V Drive

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Power - Max :

1W

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

72mOhm @ 2.5A, 4.5V

Supplier Device Package :

8-TSST

Vgs(th) (Max) @ Id :

1V @ 1mA