EFC6605R-TR

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

-

Drain to Source Voltage (Vdss) :

-

FET Feature :

Logic Level Gate, 2.5V Drive

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

19.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-SMD, No Lead

Power - Max :

1.6W

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

-

Supplier Device Package :

6-EFCP (1.9x1.46)

Vgs(th) (Max) @ Id :

-