SSM6L56FE,LM

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

800mA (Ta)

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate, 1.5V Drive

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

55pF @ 10V, 100pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

SOT-563, SOT-666

Power - Max :

150mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V

Supplier Device Package :

ES6

Vgs(th) (Max) @ Id :

1V @ 1mA