FDS6900S

制造商 :

Fairchild Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

6.9A (Ta), 8.2A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V, 17nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

771pF @ 15V, 1238pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power - Max :

900mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

30mOhm @ 6.9A, 10V, 22mOhm @ 8.2A, 10V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

3V @ 250µA, 3V @ 1mA