SIZ988DT-T1-GE3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

40A (Tc), 60A (Tc)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 4.5V, 23.1nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 15V, 2425pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Power - Max :

20.2W, 40W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V

Supplier Device Package :

8-PowerPair®

Vgs(th) (Max) @ Id :

2.4V @ 250µA, 2.2V @ 250µA