SIZ998BDT-T1-GE3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual), Schottky

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V, 46.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 15V, 2130pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Power - Max :

3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V

Supplier Device Package :

8-PowerPair® (6x5)

Vgs(th) (Max) @ Id :

2.2V @ 250µA