HS8K1TB

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

10A (Ta), 11A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V, 7.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

348pF @ 15V, 429pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-UDFN Exposed Pad

Power - Max :

2W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V

Supplier Device Package :

HSML3030L10

Vgs(th) (Max) @ Id :

2.5V @ 1mA