CSD85301Q2T

制造商 :

Texas Instruments

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

5A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate, 5V Drive

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

469pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-WDFN Exposed Pad

Power - Max :

2.3W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

27mOhm @ 5A, 4.5V

Supplier Device Package :

6-WSON (2x2)

Vgs(th) (Max) @ Id :

1.2V @ 250µA