ECH8690-TL-H

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

4.7A, 3.5A

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate, 4V Drive

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

955pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Power - Max :

1.5W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

55mOhm @ 2A, 10V

Supplier Device Package :

8-ECH

Vgs(th) (Max) @ Id :

-