NTMD6N02R2G

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

3.92A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 16V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power - Max :

730mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

35mOhm @ 6A, 4.5V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

1.2V @ 250µA