QS6K1FRATR

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

1A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate, 2.5V Drive

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

2.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power - Max :

900mW (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

238mOhm @ 1A, 4.5V

Supplier Device Package :

TSMT6 (SC-95)

Vgs(th) (Max) @ Id :

1.5V @ 1mA