DMN61D8LVT-7

制造商 :

Diodes Incorporated

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

630mA

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

0.74nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

12.9pF @ 12V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power - Max :

820mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.8Ohm @ 150mA, 5V

Supplier Device Package :

TSOT-26

Vgs(th) (Max) @ Id :

2V @ 1mA