SSM6N357R,LF

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

650mA (Ta)

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 12V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

6-SMD, Flat Leads

Power - Max :

1.5W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.8Ohm @ 150mA, 5V

Supplier Device Package :

6-TSOP-F

Vgs(th) (Max) @ Id :

2V @ 1mA