SSM6N35AFE,LF

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

250mA (Ta)

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate, 1.2V Drive

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

0.34nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

SOT-563, SOT-666

Power - Max :

250mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.1Ohm @ 150mA, 4.5V

Supplier Device Package :

ES6

Vgs(th) (Max) @ Id :

1V @ 100µA