CSD86330Q3D

制造商 :

Texas Instruments

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

20A

Drain to Source Voltage (Vdss) :

25V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 12.5V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerLDFN

Power - Max :

6W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

9.6mOhm @ 14A, 8V

Supplier Device Package :

8-LSON (3.3x3.3)

Vgs(th) (Max) @ Id :

2.1V @ 250µA