SIZ918DT-T1-GE3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

16A, 28A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Power - Max :

29W, 100W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

12mOhm @ 13.8A, 10V

Supplier Device Package :

8-PowerPair® (6x5)

Vgs(th) (Max) @ Id :

2.2V @ 250µA