IPG20N06S2L65ATMA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

20A

Drain to Source Voltage (Vdss) :

55V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerVDFN

Power - Max :

43W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

65mOhm @ 15A, 10V

Supplier Device Package :

PG-TDSON-8-4

Vgs(th) (Max) @ Id :

2V @ 14µA