SI1026X-T1-GE3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

305mA

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

30pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-563, SOT-666

Power - Max :

250mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 500mA, 10V

Supplier Device Package :

SC-89 (SOT-563F)

Vgs(th) (Max) @ Id :

2.5V @ 250µA