SSM6N57NU,LF

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

4A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-WDFN Exposed Pad

Power - Max :

1W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

46mOhm @ 2A, 4.5V

Supplier Device Package :

6-µDFN (2x2)

Vgs(th) (Max) @ Id :

1V @ 1mA