PDTC115EMB,315

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - 单，预偏置

Current - Collector (Ic) (Max) :

20 mA

Current - Collector Cutoff (Max) :

1µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA, 5V

Frequency - Transition :

230 MHz

Mounting Type :

Surface Mount

Package / Case :

SC-101, SOT-883

Power - Max :

250 mW

Product Status :

Active

Resistor - Base (R1) :

100 kOhms

Resistor - Emitter Base (R2) :

100 kOhms

Supplier Device Package :

DFN1006B-3

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50 V