RN2112ACT(TPL3)

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - 双极 (BJT) - 单，预偏置

Current - Collector (Ic) (Max) :

80 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA, 5V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

SC-101, SOT-883

Power - Max :

100 mW

Product Status :

Active

Resistor - Base (R1) :

22 kOhms

Resistor - Emitter Base (R2) :

-

Supplier Device Package :

CST3

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50 V