NTE2357

制造商 :

NTE Electronics, Inc.

产品分类 :

晶体管 - 双极 (BJT) - 单，预偏置

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 5mA, 5V

Frequency - Transition :

250 MHz

Mounting Type :

Through Hole

Package / Case :

TO-226-3, TO-92-3 Short Body

Power - Max :

300 mW

Product Status :

Active

Resistor - Base (R1) :

22 kOhms

Resistor - Emitter Base (R2) :

22 kOhms

Supplier Device Package :

TO-92S

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50 V