BCR185WE6327

制造商 :

Infineon Technologies

产品分类 :

晶体管 - 双极 (BJT) - 单，预偏置

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA, 5V

Frequency - Transition :

200 MHz

Mounting Type :

Surface Mount

Package / Case :

SC-70, SOT-323

Power - Max :

250 mW

Product Status :

Active

Resistor - Base (R1) :

10 kOhms

Resistor - Emitter Base (R2) :

47 kOhms

Supplier Device Package :

PG-SOT323-3-1

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50 V