DTDG14GPT100

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - 双极 (BJT) - 单，预偏置

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 500mA, 2V

Frequency - Transition :

80 MHz

Mounting Type :

Surface Mount

Package / Case :

TO-243AA

Power - Max :

2 W

Product Status :

Active

Resistor - Base (R1) :

-

Resistor - Emitter Base (R2) :

10 kOhms

Supplier Device Package :

MPT3

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

60 V