
产品中心
产品分类
Product Category
- 制造商 :
- onsemi
- 产品分类 :
- 晶体管 - 双极 (BJT) - 单,预偏置
- Current - Collector (Ic) (Max) :
- 100 mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 5mA, 10V
- Frequency - Transition :
- -
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 246 mW
- Product Status :
- Active
- Resistor - Base (R1) :
- 4.7 kOhms
- Resistor - Emitter Base (R2) :
- 4.7 kOhms
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Transistor Type :
- PNP - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- 数据列表
- MMUN2132LT1G