2SA1955FVBTPL3Z

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

400 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 10mA, 2V

Frequency - Transition :

130MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-723

Power - Max :

100 mW

Product Status :

Obsolete

Supplier Device Package :

VESM

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 200mA

Voltage - Collector Emitter Breakdown (Max) :

12 V