MMBT5551

制造商 :

NTE Electronics, Inc.

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

600 mA

Current - Collector Cutoff (Max) :

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA, 5V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

350 mW

Product Status :

Active

Supplier Device Package :

SOT-23-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

160 V