2N5551

制造商 :

NTE Electronics, Inc.

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

200 mA

Current - Collector Cutoff (Max) :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA, 5V

Frequency - Transition :

300MHz

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

625 mW

Product Status :

Active

Supplier Device Package :

TO-92

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

160 V