BC858BWE6327

制造商 :

Infineon Technologies

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA, 5V

Frequency - Transition :

250MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SC-70, SOT-323

Power - Max :

250 mW

Product Status :

Active

Supplier Device Package :

PG-SOT323-3-1

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

30 V