NSS20101JT1G

制造商 :

onsemi

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 100mA, 2V

Frequency - Transition :

350MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SC-89, SOT-490

Power - Max :

300 mW

Product Status :

Active

Supplier Device Package :

SC-89-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

220mV @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

20 V