NSS60601MZ4T1G

制造商 :

onsemi

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

6 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A, 2V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power - Max :

800 mW

Product Status :

Active

Supplier Device Package :

SOT-223 (TO-261)

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

300mV @ 600mA, 6A

Voltage - Collector Emitter Breakdown (Max) :

60 V