0910-150M

制造商 :

Microsemi

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

12A

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Frequency - Transition :

890MHz ~ 1GHz

Gain :

8.1dB ~ 8.5dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C (TJ)

Package / Case :

55KT

Power - Max :

400W

Product Status :

Obsolete

Supplier Device Package :

55KT

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

65V