AT-42010

制造商 :

Broadcom

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

80mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 35mA, 8V

Frequency - Transition :

8GHz

Gain :

10dB ~ 13.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.9dB ~ 3dB @ 2GHz ~ 4GHz

Operating Temperature :

200°C (TJ)

Package / Case :

4-SMD (100 mil)

Power - Max :

600mW

Product Status :

Obsolete

Supplier Device Package :

-

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V