NE68819-T1

制造商 :

CEL (California Eastern Laboratories)

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 3mA, 1V

Frequency - Transition :

5GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.7dB ~ 2.5dB @ 2GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-523

Power - Max :

125mW

Product Status :

Obsolete

Supplier Device Package :

3-SuperMiniMold (19)

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

6V