NE68119-T1

制造商 :

CEL (California Eastern Laboratories)

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

65mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 7mA, 3V

Frequency - Transition :

7GHz

Gain :

10dB ~ 14dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.4dB ~ 1.8dB @ 1GHz ~ 2GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-523

Power - Max :

100mW

Product Status :

Obsolete

Supplier Device Package :

3-SuperMiniMold (19)

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

10V