NESG2101M05-T1-A

制造商 :

Intersil (Renesas Electronics Corporation)

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

130 @ 15mA, 2V

Frequency - Transition :

17GHz

Gain :

11dB ~ 19dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.6dB ~ 1.2dB @ 1GHz ~ 2GHz

Operating Temperature :

-

Package / Case :

SOT-343F

Power - Max :

500mW

Product Status :

Obsolete

Supplier Device Package :

M05

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

5V