MT3S111P(TE12L,F)

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 30mA, 5V

Frequency - Transition :

8GHz

Gain :

10.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.25dB @ 1GHz

Operating Temperature :

150°C (TJ)

Package / Case :

TO-243AA

Power - Max :

1W

Product Status :

Active

Supplier Device Package :

PW-MINI

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

6V