HN3C10FUTE85LF

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

80mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 20mA, 10V

Frequency - Transition :

7GHz

Gain :

11.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.1dB @ 1GHz

Operating Temperature :

-

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

200mW

Product Status :

Active

Supplier Device Package :

US6

Transistor Type :

2 NPN (Dual)

Voltage - Collector Emitter Breakdown (Max) :

12V