NE66219-T1-A

制造商 :

Renesas Electronics Corporation

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

35mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA, 2V

Frequency - Transition :

21GHz

Gain :

14dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.2dB @ 2GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-523

Power - Max :

115mW

Product Status :

Obsolete

Supplier Device Package :

SOT-523

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

3.3V