NE68133-T1B-R34-A

制造商 :

Renesas Electronics Corporation

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

65mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 20mA, 8V

Frequency - Transition :

9GHz

Gain :

13dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.2dB @ 1GHz

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

200mW

Product Status :

Obsolete

Supplier Device Package :

SOT-23-3

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

10V