NE85633-T1B-R25-A

制造商 :

Renesas Electronics Corporation

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 20mA, 10V

Frequency - Transition :

7GHz

Gain :

11.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.1dB @ 1GHz

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

200mW

Product Status :

Last Time Buy

Supplier Device Package :

3-MINIMOLD

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V