NE58219-T1-A

制造商 :

Renesas Electronics Corporation

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

60mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA, 5V

Frequency - Transition :

5GHz

Gain :

5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

125°C (TJ)

Package / Case :

SC-75, SOT-416

Power - Max :

100mW

Product Status :

Last Time Buy

Supplier Device Package :

SC-75 (USM)

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V