MT3S111TU,LF

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 30mA, 5V

Frequency - Transition :

10GHz

Gain :

12.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.6dB ~ 0.85dB @ 500MHz ~ 1GHz

Operating Temperature :

150°C (TJ)

Package / Case :

3-SMD, Flat Lead

Power - Max :

800mW

Product Status :

Active

Supplier Device Package :

UFM

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

6V