BFU730LXZ

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

30mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

205 @ 2mA, 3V

Frequency - Transition :

53GHz

Gain :

15.8dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.75dB @ 6GHz

Operating Temperature :

-

Package / Case :

3-XFDFN

Power - Max :

160mW

Product Status :

Active

Supplier Device Package :

DFN1006C-3

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

3V