BFR182E-6327

制造商 :

Infineon Technologies

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

35mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA, 8V

Frequency - Transition :

8GHz

Gain :

9.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.3dB @ 1.8GHz

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

250mW

Product Status :

Active

Supplier Device Package :

SOT-23

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V